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| NTE56030 & NTE56031 TRIAC, 40 Amp Isolated Tab Description: The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab designed to be driven directly with IC and MOS devices. Absolute Maximum Ratings: Peak Repetitive Off-State Voltage (Gate Open, TJ = +110C, Note 1), VDRM NTE56030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE56031 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +80C, 360 Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . 40A Peak Non-Repetitive Surge Current (One Cycle, at 50Hz or 60Hz), ITSM . . . . . . . . . . . . . . . . . 400A Peak Gate-Trigger Current (t = 3s), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak Gate-Power Dissipation (IGT IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Average Gate-Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +110C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC(DC) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.95C/W Note 1. All values apply in either direction. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Peak Off-State Current Gate Trigger Current Quadrant I, II, III Quadrant IV Gate Trigger Voltage Gate Non-Trigger Voltage Holding Current Peak On-State Voltage VGT VGD IH VTM Symbol IDRM IGT Test Conditions TJ = +110C, VD = VDRM, Gate Open, Note 1 VD = 12V, RL = 30 T2 (+) G (+), T2 (-) G (-) Quads I and III T2 (+) G (-), T2 (-) G (+) Quads II and IV VD = 12V, RL = 30 VD = VDRM, TJ = +110C, RL = 3k, Pulse Duration > 20s, Note 1 Gate Open, Note 1 IT = 40A, Note 1 Min - Typ - Max 0.5 Unit mA - - - 0.2 - - - - - - - - 100 150 2.5 - 100 1.8 mA mA V V mA V Note 1. All values apply in either direction. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Gate Controlled Turn-On Time Critical Rate of Rise of Off-State Voltage Critical Rate of Rise of Commutation Voltage Symbol tgt dv/dt Test Conditions VD = VDRM, IT = 10A (Peak), IGT = 200mA, tR = 0.1s VD = VDRM, Gate Open, TC = +110C, Note 1 Min - - - Typ 3 200 5 Max - - - Unit s V/s V/s dv/dt(c) VD = VDRM, IT = 40A, TC = +80C Gate Unenergized, Note 1 Note 1. All values apply in either direction. .600 (15.24) .060 (1.52) .173 (4.4) Isolated .156 (3.96) Dia. MT1 MT2 Gate .550 (13.97) .430 (10.92) .500 (12.7) Min .055 (1.4) .015 (0.39) .215 (5.45) NOTE: Dotted line indicates that case may have square corners. |
Price & Availability of NTE56031
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